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Lee, S.*; 仲田 光樹; Tchernyshyov, O.*; Kim, S. K.*
Physical Review B, 107(18), p.184432_1 - 184432_12, 2023/05
被引用回数：4 パーセンタイル：90.23(Materials Science, Multidisciplinary)超対称量子力学に基づき、反強磁性スカーミオン構造を有する磁壁中のマグノンのトポロジカル量子輸送物性を明らかにする。スカーミオン型の磁気構造を有する磁壁中を伝搬するマグノンは、一種のゲージ場として作用する有効磁場を獲得する。そこで、この有効磁場中でのマグノンの反射・屈折現象を超対称量子力学に基づいて解析し、その伝搬および束縛マグノン状態を明らかにする。そして、ラウダウアー公式を用いて、磁壁のカイラリティが増加するにつれてマグノンによる熱流が減少することを明らかにする。本研究はスピンホール効果を活用した熱流の制御方法を理論的に提案する。
Sn nanodot佐藤 佑磨*; 竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*
Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03
被引用回数：1 パーセンタイル：54.89(Physics, Applied)
-MnSn, an antiferromagnet having a non-collinear spin structure in a kagome lattice, has attracted great attention owing to various intriguing properties such as large anomalous Hall effect. Stability of magnetic state against thermal fluctuation, characterized in general by the thermal stability factor 
, has been well studied in ferromagnetic systems but not for antiferromagnets. Here we study of the antiferromagnetic MnSn nanodots as a function of their diameter 
. To obtain , we measure the switching probability as a function of pulse-field amplitude and analyze the results based on a model developed by accounting for two and six-fold magnetic anisotropies in the kagome plane. We observe no significant change in down to 
nm below which it decreases with . The obtained dependence is well explained by a single-domain and nucleation-mediated reversal models. These findings provide a basis to understand the thermal fluctuation and reversal mechanism of antiferromagnets for device application.
増田 啓人*; 関 剛斎*; 山根 結太*; Modak, R.*; 内田 健一*; 家田 淳一; Lau, Y.-C.*; 深見 俊輔*; 高梨 弘毅
Physical Review Applied (Internet), 17(5), p.054036_1 - 054036_9, 2022/05
被引用回数：6 パーセンタイル：73.14(Physics, Applied)反対称層間交換結合(AIEC)が最近発見され、人工反強磁性体(SAF)の傾角磁化の誘起を通じた磁化スイッチングにおいて極めて重要な役割を果たしている。本研究では、くさび形の層を持つ垂直磁化多層膜Pt/Co/Ir/Co/Ptにおける大きなAIECを報告をする。AIECの有効磁場は、対称的な層間交換結合に関連しており、AIECを強化するための指針を提供する。SAFに対する拡張Stoner-Wohlfarthモデルを開発し、その磁化スイッチングの重要な要素を明らかにする。理論的知識と実験結果を組み合わせることで、面内磁場のみによる垂直磁化スイッチングが達成される。
Sn thin films by magneto-optical Kerr effect内村 友宏*; Yoon, J.-Y.*; 佐藤 佑磨*; 竹内 祐太郎*; 金井 駿*; 武智 涼太*; 岸 桂輔*; 山根 結太*; DuttaGupta, S.*; 家田 淳一; et al.
Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04
被引用回数：10 パーセンタイル：83.82(Physics, Applied)We perform a hysteresis-loop measurement and domain imaging for 
-oriented -Mn
Sn
thin films using magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg., comparable with bulk single-crystal MnSn. The composition 
dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by an amount of reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by a domain expansion, where the domain wall preferentially propagates along the ![$$[11bar{2}0]$$](/search/images/ERNTCMK2MJQXE4ZSPUYF0JA.gif)
direction. Our study provides a basic understanding of the spatial evolution of the reversal of chiral-spin structure in non-collinear antiferromagnetic thin films.
Schreiber, F.*; Meer, H.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Baldrati, L.*; Kl
ui, M.*
Physical Review Applied (Internet), 16(6), p.064023_1 - 064023_9, 2021/12
被引用回数：3 パーセンタイル：27.71(Physics, Applied)We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 伊藤 隆一*; 陣内 佛霖*; 金井 駿*; 家田 淳一; 深見 俊輔*; 大野 英男*
Nature Materials, 20(10), p.1364 - 1370, 2021/10
被引用回数：81 パーセンタイル：98.79(Chemistry, Physical)Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Recent studies have demonstrated electrical controls of ferromagnets and collinear antiferromagnets by spin-orbit torque (SOT). Here we show an unconventional response to SOT of a non-collinear antiferromagnet, which has recently attracted great attention owing to large anomalous Hall effect despite vanishingly small net magnetization. In heterostructures with epitaxial non-collinear antiferromagnet MnSn, we observe a characteristic fluctuation of Hall resistance, which is attributed to a persistent rotation of chiral-spin structure of MnSn driven by SOT. We find that level of the fluctuation that varies with sample size represents the number of magnetic domains of Mn
Sn. In addition, MnSn thickness dependence of critical current reveals that SOT generated by small current density below 20 MA cm
effectively acts on the chiral-spin structure even in thick MnSn above 20 nm. The results provide unprecedented pathways of electrical manipulation of magnetic materials, offering new-concept spintronics devices with unconventional functionalities and low-power consumption.
O/YIG structureQi, J.*; Hou, D.*; Chen, Y.*; 齊藤 英治; Jin, X.*
Journal of Magnetism and Magnetic Materials, 534, p.167980_1 - 167980_6, 2021/09
被引用回数：1 パーセンタイル：7.92(Materials Science, Multidisciplinary)Temperature dependence of the spin Hall magnetoresistance (SMR) has been investigated herein Pt/CrO/YFe
O
structure. Well below the N
el temperature of CrO, the SMR is not observed at the noise level of 1.2 ppm. In vicinity of the Nel temperature, only a positive SMR tracks the YIG magnetic switching process, supporting that the SMR of normal metal/antiferromagnetic insulator/ferromagnetic insulator trilayer is controlled by the Nel vector of the antiferromagnetic insulator. A high field magnetoresistance is observed up to an external magnetic field of 20000 Oe which has a field angle dependence symmetry consistent with the SMR. We attribute this high field magnetoresistance to be induced by the Hanle magnetoresistance in Pt.
Mg
TiO社本 真一; 山内 宏樹; 池内 和彦*; Lee, M. K.*; Chang, L.-J.*; Garlea, V. O.*; Hwang, I. Y.*; Lee, K. H.*; Chung, J.-H.*
Journal of the Physical Society of Japan, 90(9), p.093703_1 - 093703_4, 2021/09
被引用回数：0 パーセンタイル：0(Physics, Multidisciplinary)ハニカム格子反強磁性体MnMgTiOの5T磁場下でのスピンフロップ相の磁気構造を弾性散乱と非弾性散乱を相補的に用いることで、初めて提案した。
; 
In NQR/NMR and 
Co NMR study酒井 宏典; 徳永 陽; 神戸 振作; Zhu, J.-X.*; Ronning, F.*; Thompson, J. D.*; Ramakrishna, S. K.*; Reyes, A. P.*; 鈴木 康平*; 大島 佳樹*; et al.
Physical Review B, 104(8), p.085106_1 - 085106_12, 2021/08
被引用回数：3 パーセンタイル：27.71(Materials Science, Multidisciplinary)典型的な量子臨界金属であるCeCoInは、In元素をZn元素で少量置換することで、反強磁性を誘起できることが知られており、7%Zn置換系では、超伝導も共存する。NQRおよびNMRを用いて、微視的に電子状態を調べた結果、反強磁性はZn置換子周辺で起こり、超伝導は置換子から離れた電子状態が核となって起こり、近接効果により、バルク全体に超伝導が拡がる、という不均一性を見出した。Zn置換子周辺にある局所不均一性は、磁場をかけても残存することも見出した。
Sn thin filmsYoon, J.-Y.*; 竹内 祐太郎*; DuttaGupta, S.*; 山根 結太*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*
AIP Advances (Internet), 11(6), p.065318_1 - 065318_6, 2021/06
被引用回数：14 パーセンタイル：79.58(Nanoscience & Nanotechnology)We investigate the relationship between structural parameters, magnetic ordering, and the anomalous Hall effect (AHE) of MnSn (
) thin films annealed at various temperature 
. The crystal structure changes with and and at 
C near the stoichiometric composition (
) epitaxial single-phase 0
-MnSn(
) is obtained. At room temperature, a larger AHE is obtained when the single-phase epitaxial MnSn with the lattice constant closer to that of bulk is formed. The temperature dependence of the AHE shows different behaviors depending on and can be explained by considering the variation of magnetic ordering. A close inspection into the temperature and composition dependence suggests a variation of magnetic phase transition temperature with composition and/or a possible correlation between the AHE and Fermi level position with respect to the Weyl points. Our comprehensive study would provide the basis for utilizing the unique functionalities of non-collinear antiferromagnetic materials.
Hwang, I. Y.*; Lee, K. H.*; Chung, J.-H.*; 池内 和彦*; Garlea, V. O.*; 山内 宏樹; 赤津 光洋*; 社本 真一
Journal of the Physical Society of Japan, 90(6), p.064708_1 - 064708_6, 2021/06
被引用回数：2 パーセンタイル：30.35(Physics, Multidisciplinary)ハニカム格子反強磁性体MnTiOのスピン波を調べ、スピン間の交換相互作用を正確に求めた。
Si; 
Si NMR study酒井 宏典; 松本 裕司*; 芳賀 芳範; 徳永 陽; 神戸 振作
Physical Review B, 103(8), p.085114_1 - 085114_8, 2021/02
被引用回数：0 パーセンタイル：0(Materials Science, Multidisciplinary)重い電子系反強磁性体CeRhSiにおいて、Si核核磁気共鳴(NMR)を用いて、圧力下相図について微視的に調べた。NMRデータから、反強磁性伝搬ベクトル
に依らない単一サイト近藤効果の特徴的温度スケール
を導出した。圧力下の反強磁性臨界点においての発散的異常は見られず、重い電子系の典型的なDoniach描像と矛盾しない結果が得られた。
symmetry in the tetragonal state of uniaxial strained BaCo
Ni
S
社本 真一; 山内 宏樹; 池内 和彦*; 梶本 亮一; 家田 淳一
Physical Review Research (Internet), 3(1), p.013169_1 - 013169_9, 2021/02
A compound with large anions is known to show large compressibility whereby a novel response may emerge from the degenerated state by a uniaxial pressure. Neutron scattering study of BaCoNiS crystal reveals that the tetragonal insulating state has two magnetic domains with in-plane anisotropic antiferromagnetic wave vectors 
=(
, 0) and 
=(0, ). One magnetic domain with becomes dominant under a weak uniaxial pressure of 1 MPa without a structural phase transition. Correspondingly, the in-plane broken C symmetry is observed in the in-plane magnetic excitation. The domain-ratio changes under a uniaxial pressure in the tetragonal state is only slightly smaller than that in the orthorhombic state.
Meer, H.*; Schreiber, F.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Gomonay, O.*; Sinova, J.*; Baldrati, L.*; Klui, M.*
Nano Letters, 21(1), p.114 - 119, 2021/01
被引用回数：51 パーセンタイル：96.99(Chemistry, Multidisciplinary)We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
Schreiber, F.*; Baldrati, L.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Lebrun, R.*; Klui, M.*
Applied Physics Letters, 117(8), p.082401_1 - 082401_5, 2020/08
被引用回数：25 パーセンタイル：84.2(Physics, Applied)We demonstrate stable and reversible current induced switching of large-area (
100 
m
) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains, enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.
Baldrati, L.*; Schmitt, C.*; Gomonay, O.*; Lebrun, R.*; Ramos, R.*; 齊藤 英治; Sinova, J.*; Klui, M.*
Physical Review Letters, 125(7), p.077201_1 - 077201_6, 2020/08
被引用回数：36 パーセンタイル：91.79(Physics, Multidisciplinary)We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of 
TA
m. The Nel vector final state 
is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.
藤原 理賀*; 森田 克洋*; Mole, R.*; 満田 節生*; 遠山 貴巳*; 矢野 真一郎*; Yu, D.*; 曽田 繁利*; 桑井 智彦*; 幸田 章宏*; et al.
Nature Communications (Internet), 11, p.3429_1 - 3429_7, 2020/07
被引用回数：37 パーセンタイル：90.63(Multidisciplinary Sciences)Observation of a quantum spin liquid (QSL) state is one of the most important goals in condensed-matter physics, as well as the development of new spintronic devices that support next-generation industries. The QSL in two-dimensional quantum spin systems is expected to be due to geometrical magnetic frustration, and thus a kagome-based lattice is the most probable playground for QSL. Here, we report the first experimental results of the QSL state on a square-kagome quantum antiferromagnet, KCu
AlBiO
(SO)Cl. Comprehensive experimental studies via magnetic susceptibility, magnetisation, heat capacity, muon spin relaxation, and inelastic neutron scattering measurements reveal the formation of a gapless QSL at very low temperatures close to the ground state. The QSL behavior cannot be explained fully by a frustrated Heisenberg model with nearest-neighbor exchange interactions, providing a theoretical challenge to unveil the nature of the QSL state.
O thin filmsQin, J.*; Hou, D.*; Chen, Y.*; 齊藤 英治; Jin, X.*
Journal of Magnetism and Magnetic Materials, 501, p.166362_1 - 166362_4, 2020/05
被引用回数：4 パーセンタイル：26.39(Materials Science, Multidisciplinary)Spin transmission in CrO films of different crystalline textures is studied experimentally. With YFeO/CrO/Pt trilayer devices, a spin current is injected into CrO by spin pumping from YFeO, and the spin transmission is monitored by the inverse spin Hall voltage (
) in Pt. For (0001) plane textured CrO films, vanishes quickly below the Nel temperature. However, the shows a broad shoulder below the Nel temperature for 
and 
plane co-textured CrO. Such a difference in the temperature dependence of CrO can be understood by the different Nel vector orientations with respect to the injected spin moment direction.
Klotz, S.*; 小松 一生*; Polian, A.*; 町田 真一*; 佐野 亜沙美; Iti
, J.-P.*; 服部 高典
Physical Review B, 101(6), p.064105_1 - 064105_6, 2020/02
被引用回数：4 パーセンタイル：26.53(Materials Science, Multidisciplinary)マンガン酸化物(MnO)は、反強磁性モット絶縁体の典型物質である。今回、我々は、高圧下においてネール温度
を挟んだ温度域で磁気秩序と格子歪の相互作用を、X線および中性子回折により調べた。その結果、体積歪は圧力に対して鈍感であること、は
=+4.5(5)K/GPaで上昇すること、格子歪
は
=+0.018
/GPaで増大することがわかった。これらの結果は、
, 
相互作用定数の原子間距離への影響を調べることや、また第一原理計算による理論予測と比較を可能にする。反強磁性相互作用に起因する散漫散乱は、
1.2まで観測され、長距離秩序は、室温では42GPaで現れる。
el order switching in antiferromagnetic thin films revealed by magnetotransport and direct imagingBaldrati, L.*; Gomonay, O.*; Ross, A.*; Filianina, M.*; Lebrun, R.*; Ramos, R.*; Leveille, C.*; Fuhrmann, F.*; Forrest, T. R.*; Maccherozzi, F.*; et al.
Physical Review Letters, 123(17), p.177201_1 - 177201_6, 2019/10
被引用回数：118 パーセンタイル：98.44(Physics, Multidisciplinary)We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
